MKI 75-06 A7 MKI 75-06 A7T
IGBT Modules H-Bridge
Short Circuit SOA Capability Square RBSOA
IC25 = 90 A VCES = 600 V VC...
MKI 75-06 A7 MKI 75-06 A7T
IGBT Modules H-Bridge
Short Circuit SOA Capability Square RBSOA
IC25 = 90 A VCES = 600 V VCE(sat) =typ. 2.1 V
Type:
MKI 75-06 A7 MKI 75-06 A7T
NTC - Option:
without NTC with NTC
13
T1 D1 T5 D5
1 T
9
2 10 16
14
T T2 D2 T6 D6 3 11
4 12 17
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
t SC
(SCSOA) Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V ± 20 V
TC = 25°C TC = 80°C
90 60
VGE = ±15 V; RG = 18 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH
ICM = 120 VCEK ≤ VCES
V CE
=
V; CES
VGE
=
±15
V;
R G
=
18
Ω;
TVJ
=
125°C
non-repetitive
10
A A A
µs
TC = 25°C
280 W
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Eon Eoff Cies QGon R
thJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 1.5 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 300 V; IC = 75 A VGE = ±15 V; RG = 18 Ω
2.1 2.6 V 2.5 V
4.5 6.5 V
1.3 mA 0.9 mA
200 nA
50 ns 50 ns 270 ns 40 ns 3.5 mJ 2.5 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 75 A
(per IGBT)
3200 190
pF nC
0.44 K/W
B3
Features
NPT IGBT technology low saturation
voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for
easy parallelling MOS input,
voltage controlled ultra fast fr...