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MLP1N06CL Datasheet

Part Number MLP1N06CL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description MOSFET
Datasheet MLP1N06CL DatasheetMLP1N06CL Datasheet (PDF)

www.DataSheet4U.com MLP1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel TO–220 These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal gate.

  MLP1N06CL   MLP1N06CL






Part Number MLP1N06CL
Manufacturers Motorola
Logo Motorola
Description VOLTAGE CLAMPED CURRENT LIMITING MOSFET
Datasheet MLP1N06CL DatasheetMLP1N06CL Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MLP1N06CL/D SMARTDISCRETES ™ Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoi.

  MLP1N06CL   MLP1N06CL







MOSFET

www.DataSheet4U.com MLP1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel TO–220 These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to–source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature. • Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage • Integrated ESD Diode Protection • Controlled Switching Minimizes RFI • Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage – Continuous Drain Current – Continuous Drain Current – Single Pulse Total Power Dissipation Electrostatic Discharge Voltage (Human Bod.


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