MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MLP2N06CL/D
™ Data Sheet SMARTDISCRETES ™ Int...
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MLP2N06CL/D
™ Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N–Channel Logic Level Power
MOSFET
The MLP2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in–rush current or a shorted load condition could occur. This logic level power
MOSFET features current limiting for short circuit protection, integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping for over–
voltage protection and Sensefet technology for low on–resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate–Source and Gate–Drain clamps allow the device to be applied without use of external transient suppression components. The Gate–Source clamp protects the
MOSFET input from electrostatic
voltage stress up to 2.0 kV. The Gate–Drain clamp protects the
MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides
voltage clamping that is essentially independent of operating temperature. The MLP2N06CL is fabricated using Motorola’s SMARTDISCRETES™ technology which combines the ...