June 2020
Version 01
MM120G3T65BM
650V 120A IGBT RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT chip in trench FS-techno...
June 2020
Version 01
MM120G3T65BM
650V 120A IGBT RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ Motor control □ UPS/PFC □ General purpose inverters
1 2 3
1.Gate 2.Collector 3.Emitter
Type
VCES
MM120G3T65BM 650V
IC 120A
VCE(sat) TJ=25°C 1.6V
TJmax 175°C
Marking MM120G3T65BM
Package TO-247 Plus
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter
Voltage
TJ=25℃
VGES Gate Emitter
Voltage
IC
DC Collector Current
TC=25℃ TC=110℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse
Voltage
TJ=25℃
IF(AV) Average Forward Current
TC=95℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Weight
Values
Unit
650 V
±20
200
120
A
360
750
W
650
V
120 A
360
175
-40~175
℃
-55~150
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
MM120G3T65BM
IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate E...
