MM3008 MM3009
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Vol...
MM3008 MM3009
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter
Voltage
Emitter-Base
Voltage
—Collector Current Continuous
@Total Device Dissipation T^ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
UjJ Temperature Range
Symbol vCEO vEBO
'C
PD
Pd
TJ- Tstg
MM3008 MM3009
120 180 6.0 400
1.0 5.71
4.0 22.8
-65 to +200
Unit Vdc Vdc
mAdc
Watt mW/°C
Watts mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown
Voltaged) dC = 10 mAdc, Bl = 0)
Emitter-Base Breakdown
Voltage (IE = 10 ^Adc, cl = 0)
Collector Cutoff Current
WCB = 120 Vdc, El = 0)
(VCB = 1 30 Vdc, El = 0)
Emitter Cutoff Current
(VBE = 4.0 Vdc, cl = 0)
ON CHARACTERISTICS
DC Current Gain Oc = 10 mAdc, Vqe = 10 Vdc) dC = 10 mAdc, Vce = 10 Vdc) dp = 30 mAdc, Vqe = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Pr...
