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MM60F120B

Thinki Semiconductor

SwitchMode Single Fast Recovery Epitaxial Diode

MM60F120B ® MM60F120B Pb Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diod...


Thinki Semiconductor

MM60F120B

File Download Download MM60F120B Datasheet


Description
MM60F120B ® MM60F120B Pb Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-247-2L Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside Anode Cathode GENERAL DESCRIPTION MM60F120B using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR V RRM I F(AV) I F(RMS) I FSM PD TJ T STG Torque Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage Average Forward Current RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink TC=110°C TC=110°C TJ=45°C, t=10ms, 50Hz, Sine Recommended(M3) 1200 1200 60 84 500 312 -40 to +150 -40 to +150 1.1 V V A A A W °C °C N·m R θJC Thermal Resistance Junction-to-Case 0.4 °C /W Weight 6.0 g ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IRM Reverse Leakage Current VR=1200V VR=1200V, TJ=125°C -- -- 500 µA -- -- 5 mA VF Forwa...




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