MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for low–cost, high–volume consumer requirements. Also available in Surface Mount package. Low Noise Figure — 6.0 dB Typ @ 1.0 GHz Very Low Capacitance — Less Than 1.0 pF @ Zero Volts High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA
MBD101 MMBD101LT1
Motorola Preferred Devices
SILICON SCHOTTKY BARRIER DIODES
2 CATHODE
1 ANODE
3 CATHODE
1 ANODE
1 2
CASE 182– 02, STYLE 1 (TO–226AC)
MAXIMUM RATINGS
Rating Reverse
Voltage Forward Power Dissipation
@ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range
DEVICE MARKING MMBD101LT1 = 4M
Symbol VR PF
TJ Tstg
MBD101 MMBD101LT1 Value 7.0
Unit Volts
280 225 2.2 1.8
+150
– 55 to +150
mW mW/°C
°C
°C
3
1 2
CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)
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