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MMBD1401 Datasheet

Part Number MMBD1401
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Small Signal Diodes
Datasheet MMBD1401 DatasheetMMBD1401 Datasheet (PDF)

Small Signal Diodes MMBD1401, MMBD1403, MMBD1404, MMBD1405 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) (Notes 1, 2) Rating Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 200 V Average Rectified Forward Current IF(AV) 200 mA Non−Repetitive Peak Forward Surge IFSM A Current Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 Storage Temperature Range TSTG −55 to +150 C Operating Junction Temperature TJ 150 C Stresses exceeding tho.

  MMBD1401   MMBD1401






Part Number MMBD1401
Manufacturers Jinan Gude Electronic Device
Logo Jinan Gude Electronic Device
Description SURFACE MOUNT SWITCHING DIODES
Datasheet MMBD1401 DatasheetMMBD1401 Datasheet (PDF)

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  MMBD1401   MMBD1401







Part Number MMBD1401
Manufacturers Fairchild
Logo Fairchild
Description Small Signal Diodes
Datasheet MMBD1401 DatasheetMMBD1401 Datasheet (PDF)

MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes November 2014 MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Small Signal Diodes 3 2 1 SOT-23 Connection Diagrams 1401 3 3 1403 1 2NC 1404 3 12 3 1405 12 12 Ordering Information Part Number MMBD1401 MMBD1403 MMBD1404 MMBD1405 Top Mark 29 32 33 34 Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Tape and Reel Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the abs.

  MMBD1401   MMBD1401







Small Signal Diodes

Small Signal Diodes MMBD1401, MMBD1403, MMBD1404, MMBD1405 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) (Notes 1, 2) Rating Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 200 V Average Rectified Forward Current IF(AV) 200 mA Non−Repetitive Peak Forward Surge IFSM A Current Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 Storage Temperature Range TSTG −55 to +150 C Operating Junction Temperature TJ 150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Power Dissipation Thermal Resistance, Junction−to−Ambient PD RqJA 350 mW 357 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Symbol Condition Min Max Unit Breakdown Voltage BV IR = 100 mA 200 − V Forward Voltage Reverse Current Total Capacitance VF IF = 10 mA IF = 50 mA IF = 200 mA IF = 300 mA IR VR = 120 V VR = 175 V CT VR = 0, f = 1.0 MHz − 800 mV 760 920 mV − 1.0 V − 1.1 V − 40 nA − 100 nA − 2.0 pF Reverse Recovery trr IF = IR .


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