SMD Type
High Conductance Low Leakage Diode MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A
Diodes
Features
+0.12.4 -0.1
...
SMD Type
High Conductance Low Leakage Diode MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A
Diodes
Features
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Value
Unit
Working lnverse
voltage
WIV 20
V
Average rectified current
IO 50 mA
DC forward current
IF 150 mA
recurrent peak forward current
if 150 mA
Peak forward surge current pulse width = 1.0 second
if
250 mA
Storage temperature range
Tstg -55 to + 150
Operating junction temperature
TJ 150
Total device dissipation Derate above 25
350 mW PD
2.8 mW/
Thermal resistance, Junction to ambient
R JA
357
/W
MMBD1701/A /1703/A-1705/A*
* Device mounted on glass epoxy 1.6" 1.6" 0.06", mounting pad for collector lead min. 0.93in2.
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
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SMD Type
MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A
Diodes
Electrical Characteristics Ta = 25
Parameter Breakdown
voltage Reverse current
Forward
voltage
Diode capacitance Reverse Recovery time MMBD1701-1705 MMBD1701A-1705A
Symbol BV IR
VF
CD
Conditions IR = 5.0 A
IF = 20 V IF = 10 A IF = 100 A IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA VR = 0, f = 1.0 MHz
TRR IF = IR = 10 mA,IRR = 1.0 mA, RL = 100 IF = IR = 10 mA,IRR = 1.0 mA, RL = 101
Min 30
420 520 640 760 810 0.89
Max
50 500 610 740 880 950 1.1 1.0
700 1.0
Unit V nA mV mV mV mV mV V pF
ps ns
Marking
T...