MMBD2836LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2835LT1/D Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 ANODE 3 CATHODE 1 2 CATHODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc CASE 318 – 08, STYLE 12 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBD2835LT1 = A3X; MMBD2836LT1 = A2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 µAdc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2835LT1 MMBD2836LT1 MMBD2835LT1 MMBD2836LT1 CT VF V(BR) IR 35 75 — — — — — — — — — 100 100 4.0 1.0 1.0 1.2 4.0 pF Vdc Vdc nAdc   0.062 in.   0.024 in. 99.5% alumina. trr ns Thermal Clad is a...