DatasheetsPDF.com

MMBD330T1 Datasheet

Part Number MMBD330T1
Manufacturers Motorola
Logo Motorola
Description Schottky Barrier Diodes
Datasheet MMBD330T1 DatasheetMMBD330T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document BY MMBD110T1/D Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage • Available in 8 mm Tape and R.

  MMBD330T1   MMBD330T1






Part Number MMBD330T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Schottky Barrier Diodes
Datasheet MMBD330T1 DatasheetMMBD330T1G Datasheet (PDF)

MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface mount applications. Features  Extremely Low Minority Carrier Lifetime  Very Low Capacitance  Low Reverse Leakage  Available in 8 mm Tape and Reel  AEC Qualif.

  MMBD330T1   MMBD330T1







Schottky Barrier Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document BY MMBD110T1/D Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage • Available in 8 mm Tape and Reel MMBD110T1 MMBD330T1 MMBD770T1 3 1 2 CASE 419A–02, STYLE 2 SOT-323/SC–70 MAXIMUM RATINGS Rating Reverse Voltage MMBD110T1 MMBD330T1 MMBD770T1 Symbol VR Value 7.0 30 70 120 – 55 to +125 – 55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °C °C DEVICE MARKING MMBD110T1 = 4M MMBD330T1 = 4T MMBD770T1 = 5H Thermal Clad is a registered trademark of the Bergquist Company. Motorola Transistors, FETs and Diodes Device Data © Motorola, Small–Signal Inc. 1996 1 MMBD110T1 MMBD330T1 MMBD770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MMBD110T1 MMBD330T1 MMBD770T1 CT MMBD110T1 MMBD330T1 MMBD770T1 IR MMBD110T1 MMBD330T1 MMBD770T1 NF MMBD110T1 VF MMBD110T1 MMBD330T1 MMBD770T1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 20 13 9.0 250 200 200 dB — — — 0.88 0.9 0.5 1.0 1.5 1.0 nAdc Symbol V(BR)R 7.0 30 70 10 — — — — — pF Mi.


2005-05-09 : MM54C221    MM54C240    MM54C244    MM54C42    MM54C74    MM54C85    MM54C86    MM54C89    MM54C90    MM54C901   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)