MMBD355LT1

www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features 1 2 http://onsemi.com 3 SOT−23 (TO−236) CASE 318 Very Low Capacitance − Less Than 1.0 pF @ Zero V Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE MMBD352LT1 STYLE 11 2 CATHODE 1 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ANODE 3 3 CATHODE/ANODE MMBD353LT1 STYLE 19 2 ANODE RqJA PD 3 CATHODE MMBD354LT1 STYLE 9 1 ANODE 2 ANODE RqJA TJ, Tstg 1 CATHODE 2 CATHODE MMBD355LT1 STYLE 12 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 =...