MMBD4148-193

High Performance Switching Diode MMBD4148-193 High Performance Switching Diode Features Silicon Epitaxial Planar Diode Ultra High Speed Switching Application High Conductance Electrically Identical to Standard JEDEC RoHS Compliant SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Case Solderable per MIL-STD-202G, Method 208 Approx. 0.0088 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code VRM Reverse Voltage VRRM Peak Reverse Voltage IF(AV) Forward Average Current IFM Peak Forward Current IFSM Peak Forward Surge Current (10mS) PD Power Dissipation TJ Junction Temperature TSTG Storage Temperature Range MMBD4148-193 F3 80 85 100 300 2 150 150 -55 to +150 Unit V V mA mA A mW °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH 2008-07-17 Page 1 of 3 High Performance Switching Diode MMBD4148-193 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. - 0.60 - VF Forward Voltage - 0.72 - - 0.90 1.20 IR Reverse Current - - 0.5 CT Total Capacitance - 0.9 3.0 Trr Reverse Recovery Time - 1.6 4.0 Unit Conditions IF=1mA V IF=10mA IF=100mA µA VR=80V pF VR=0V, f=1MHz nS IF=10mA Marking Information: Laser Marking www.taitroncomponents.com Rev. A/AH 2008-07-17 Page 2 of 4 Dimensions in mm (inch) High Performance Switch...