MMBF0201N

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF0201N/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT–23 Surface Mount Package Saves Board Space MMBF0201N Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.0 OHM ™ 3 3 DRAIN 1 2 CASE 318–07, Style 21 SOT–23 (TO–236AB) 1 GATE 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RθJA TL Value 20 ± 20 300 240 750 225 – 55 to 150 625 260 Unit Vdc Vdc mAdc mW °C °C/W °C DEVICE MARKING N1 (1) Mounted on G10/FR4 glass epoxy board using minimu...