MMBF2202PT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBF2202PT1/D MMBF2202PT1 Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC–70/SOT–323 Surface Mount Package Saves Board Space 1 GATE 2 SOURCE Motorola Preferred Device P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 2.2 OHM ™ CASE 419–02, STYLE 7 SC–70/SOT–323 3 DRAIN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RθJA TL Value 20 ± 20 300 240 750 150 1.2 – 55 to 150 833 260 Unit Vdc Vdc mAdc mW...