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MMBF5484LT1 Datasheet

Part Number MMBF5484LT1
Manufacturers Motorola
Logo Motorola
Description JFET Transistor
Datasheet MMBF5484LT1 DatasheetMMBF5484LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5484LT1/D JFET Transistor N–Channel 2 SOURCE 3 GATE MMBF5484LT1 Motorola Preferred Device 1 DRAIN MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg – 65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 10 S.

  MMBF5484LT1   MMBF5484LT1






Part Number MMBF5484LT1
Manufacturers ON
Logo ON
Description JFET Transistor
Datasheet MMBF5484LT1 DatasheetMMBF5484LT1 Datasheet (PDF)

www.DataSheet4U.com MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg −65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic .

  MMBF5484LT1   MMBF5484LT1







JFET Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5484LT1/D JFET Transistor N–Channel 2 SOURCE 3 GATE MMBF5484LT1 Motorola Preferred Device 1 DRAIN MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg – 65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBF5484LT1 = 6B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = – 20 Vdc, VDS = 0) (VGS = – 20 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS — — VGS(off) – 0.3 – 1.0 – 0.2 – 3.0 nAdc µAdc Vdc – 25 — Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 1. FR– 5 = 1.0 |Yfs| |yos| 3000 — 6000 50 µmhos µmhos .


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