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MMBFJ108 Datasheet

Part Number MMBFJ108
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Switch
Datasheet MMBFJ108 DatasheetMMBFJ108 Datasheet (PDF)

J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58 1 TO-92 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Ordering Information Part Number J109 J109_D26Z MMBFJ108 Top Mark J109 J109 I8 3 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Figure 2. MMBFJ108 Device Package Package TO-92 3L TO-92 3L SSOT 3L Pac.

  MMBFJ108   MMBFJ108






Part Number MMBFJ108
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel JFET
Datasheet MMBFJ108 DatasheetMMBFJ108 Datasheet (PDF)

N-Channel JFET J109, MMBFJ108 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to 150 °C Stresses exceeding those liste.

  MMBFJ108   MMBFJ108







N-Channel Switch

J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58 1 TO-92 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Ordering Information Part Number J109 J109_D26Z MMBFJ108 Top Mark J109 J109 I8 3 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Figure 2. MMBFJ108 Device Package Package TO-92 3L TO-92 3L SSOT 3L Packing Method Bulk Tape and Reel Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 -25 10 -55 to 150 V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2..


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