MMBFJ110

N-Channel JFET MMBFJ110 Features This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory Sourced from Process 58 This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Current 10 mA TJ Junction Temperature 150 °C TJ, TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (Note 3) Symbol Parameter Max Unit PD Total Device Dissipation Derate Above 25°C 460 mW 3.68 mW/°C RqJA Thermal Resistance, Junction−to−Ambient 270 °C/W 3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. www.onsemi.com 3 1 2 SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9 CASE 527AG 1. Drain, 2. Source, 3. Gate MARKING DIAGRAM &Y 110 &G 110 = Specific Device Code &Y = Year Coding &G = Weekly Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of...