N-Channel Switch
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
Features
• This Device is Designed for Low Level Analog...
N-Channel Switch
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
Features
This Device is Designed for Low Level Analog Switching, Sample
and Hold Circuits and Chopper Stabilized
Amplifiers
Sourced from Process 51 Source & Drain are Interchangeable These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2)
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain−Gate
Voltage
Gate−Source
Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
V
−35
V
50
mA
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max
Symbol PD
Parameter
MMBFJ111 /
J111 / J112 / MMBFJ112 /
J113
MMBFJ113
(Note 3)
(Note 4)
Unit
Total Device Dissipation
625
350
mW
Derate Above 25_C
5.0
2.8
mW/°C
RqJC Thermal Resistance,
125
Junction−to−Case
−
°C/W
RqJA Thermal Resistance,
200
Junction−to−Ambient
357
°C/W
3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR−4 PCB 36 mm x 18 mm x ...