MMBR5031LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR5031LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0 GHz. High Gain — Gpe = 17 dB Typ @ f = 450 MHz Low Noise — NF = 2.5 dB Typ @ f = 450 MHz Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 10 15 3.0 20 150 0.300 4.00 Unit Vdc Vdc Vdc mAdc °C W mW/°C MMBR5031LT1 RF AMPLIFIER TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resistance Junction to Case Symbol Tstg RθJC Max – 55 to +150 250 Unit °C °C/W CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) DEVICE MARKING MMBR5031LT1 = 7G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 0.01 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 6.0 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 10 15 3.0 — — — — — — — — 10 Vdc Vdc Vdc nAdc ON CH...