MMBT2131T1

MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) VCEO VCBO VEBO IC IB PD PD RqJA 30 V 40 V 5.0 V 700 mA 350 mA 342 mW 178 mW 366 °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2) PD PD RqJA 665 mW 346 mW 188 °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State. http://onsemi.com 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW BASE PIN 6 COLLECTOR PINS 2, 5 (PINS 1, 4 NO CONNECT) EMITTER PIN 3 654 1 23 SC−74 CASE 318F STYLE 2 MARKING DIAGRAM DBMG G DB = Device Code M = Date Code* G...