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MMBT2131T1G Datasheet

Part Number MMBT2131T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistors
Datasheet MMBT2131T1G DatasheetMMBT2131T1G Datasheet (PDF)

MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) .

  MMBT2131T1G   MMBT2131T1G






Part Number MMBT2131T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistors
Datasheet MMBT2131T1G DatasheetMMBT2131T1 Datasheet (PDF)

MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) .

  MMBT2131T1G   MMBT2131T1G







PNP Transistors

MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) VCEO VCBO VEBO IC IB PD PD RqJA 30 V 40 V 5.0 V 700 mA 350 mA 342 mW 178 mW 366 °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2) PD PD RqJA 665 mW 346 mW 188 °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State. http://onsemi.com 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW BASE PIN 6 COLLECTOR PINS 2, 5 (PINS 1, 4 NO CONNECT) EMITTER PIN 3 654 1 23 SC−74 CASE 318F STYLE 2 MARKING DIAGRAM DBMG G DB = Device Code M = Date Code* G.


2022-10-19 : NLMD5820    MMBT2131T1    MMBT2131T1G    MBRP20035L    NCV2211    ADP3193A    NCS8353    ESD5481    MTDF2N06HD    NSR0620P2   


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