MMBT2131T3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2131T1/D Product Preview General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C MMBT2131T1 MMBT2131T3 0.7 AMPERES 30 VOLTS — V(BR)CEO 342 mW 6 5 4 1 2 3 CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 PNP Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Base Breakdown Voltage (IC = 100 mAdc) Collector – Emitter Breakdown Voltage (IC = 10 mAdc) Emitter–Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) V(BR)CBO 40 V(BR)CEO 30 V(BR)EBO 5.0 ICBO — — IEBO — — 10 — ...