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MMBT2222AW Datasheet

Part Number MMBT2222AW
Manufacturers Kexin
Logo Kexin
Description General Purpose Transistor
Datasheet MMBT2222AW DatasheetMMBT2222AW Datasheet (PDF)

SMD Type General Purpose Transistor MMBT2222AW TransistIoCrs Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC PD RèJA Tj Tstg Rating 40 75 6.0 600 150 833 150 -55 to +150 Unit V V V mA mW /W www.kexin..

  MMBT2222AW   MMBT2222AW






Part Number MMBT2222AW
Manufacturers SeCoS
Logo SeCoS
Description NPN Silicon General Purpose Transistor
Datasheet MMBT2222AW DatasheetMMBT2222AW Datasheet (PDF)

Elektronische Bauelemente MMBT2222AW NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  Complementary PNP Type Available(MMBT2907AW)  Epitaxial Planar Die Construction  Ideal for Medium Power Amplification and Switching MARKING CODE K3P / P1 SOT-323 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PACKAGE INFORMATION Package MPQ SOT-323 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1.

  MMBT2222AW   MMBT2222AW







Part Number MMBT2222AW
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet MMBT2222AW DatasheetMMBT2222AW Datasheet (PDF)

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  MMBT2222AW   MMBT2222AW







Part Number MMBT2222AW
Manufacturers UPM
Logo UPM
Description NPN GENERAL PURPOSE SWITCHING TRANSISTOR
Datasheet MMBT2222AW DatasheetMMBT2222AW Datasheet (PDF)

.004(.10)MIN. .087(2.2) .078(2.0) UPM MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features * NPN epitaxial silicon, planar design * Collector-emitter voltage VCE = 40V * Collector current IC = 600mA * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above Mechanical Data Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram Marking: M2A Top View 3 Co.

  MMBT2222AW   MMBT2222AW







Part Number MMBT2222AW
Manufacturers CHINA BASE
Logo CHINA BASE
Description NPN Silicon Epitaxial Planar Medium Power Transistor
Datasheet MMBT2222AW DatasheetMMBT2222AW Datasheet (PDF)

MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value MMBT2222W MMBT2222AW 60 75 30 40 56 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC Page 1 of 5 3/17/2014 MMBT2222W / MMBT22.

  MMBT2222AW   MMBT2222AW







Part Number MMBT2222AW
Manufacturers WEITRON
Logo WEITRON
Description NPN General Purpose Transistors
Datasheet MMBT2222AW DatasheetMMBT2222AW Datasheet (PDF)

MMBT2222AW=P1 VCEO MMBT2222AW Value 3 1 2 SOT-323(SC-70) TJ ,Tstg 150 833 -55 to+150 (1) 1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0% u WEITRON http://www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max ON CHARACTERISTICS(1) DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc) (IC=150mAdc, VCE=10 Vdc) (IC=500 mAdc, VCE=10 Vdc) Collector-Emitter Saturatio.

  MMBT2222AW   MMBT2222AW







General Purpose Transistor

SMD Type General Purpose Transistor MMBT2222AW TransistIoCrs Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC PD RèJA Tj Tstg Rating 40 75 6.0 600 150 833 150 -55 to +150 Unit V V V mA mW /W www.kexin.com.cn 1 SMD Type TransistIoCrs MMBT2222AW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 40 V Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 75 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6V Base cutoff current IBL VCE = 60 V, VEB = 3.0 V 20 nA Collector cutoff current ICEX VCE = 60 V, VEB = 3.0 V 10 nA DC current gain * HFE IC = 150 mA,.


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