MMBT2222AWT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Order this document by MMBT2222AWT1/D General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. COLLECTOR 3 MMBT2222AWT1 Motorola Preferred Device 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc CASE 419 – 02, STYLE 3 SOT– 323/SC – 70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C DEVICE MARKING MMBT2222AWT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 — — — — — 20 10 Vdc Vdc Vdc nAdc nAdc v 300 ms, Duty Cycle v 2.0%. Thermal Clad is a registered trademark of the Berquist Com...