PN2484 / MMBT2484
Discrete POWER & Signal Technologies
PN2484
MMBT2484
C
E C BE
TO-92
SOT-23
Mark: 1U
B
NPN Gene...
PN2484 / MMBT2484
Discrete POWER & Signal Technologies
PN2484
MMBT2484
C
E C BE
TO-92
SOT-23
Mark: 1U
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter
Voltage
Value
60 60 5.0 100 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2484 625 5.0 83.3 200
Max
*MMBT2484 350 2.8 357
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
PN2484 / MMBT2484
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Co...