MMBT2907AWT1

MMBT2907AWT1 Preferred Device General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 1 BASE Pb−Free Package is Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −60 −5.0 −600 Unit Vdc Vdc Vdc mAdc 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW °C/W °C 1 2 3 SC −70/SOT−323 CASE 419 −04 STYLE 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 20 20 = Specific Device Code ORDERING INFORMATION Device MMBT2907AWT1 MMBT2907AWT1G Package SC−70 Shipping† 3000 Tape & Reel SC−70 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packagin...