MMBT2907W / MMBT2907AW
PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications
Ab...
MMBT2907W / MMBT2907AW
PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage
MMBT2907W MMBT2907AW
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol -VCBO -VCEO
-VEBO -IC Ptot Tj Tstg
Value 60 40 60 5
600 200 150 - 55 to + 150
Unit V V
V mA mW OC OC
ShangHai JR Electronics.CO.,LTD.
http://www.jrdz.net.cn
MMBT2907W / MMBT2907AW
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at -VCE = 10 V, -IC = 0.1 mA
at -VCE = 10 V, -IC = 1 mA
at -VCE = 10 V, -IC = 10 mA
at -VCE = 10 V, -IC = 150 mA at -VCE = 10 V, -IC = 500 mA
MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW
MMBT2907W MMBT2907AW
Collector Base Cutoff Current at -VCB = 50 V
Collector Emitter Cutoff Current at -VCE = 30 V
Emitter Base Cutoff Current at -VEB = 3 V
Collector Base Breakdown Volta...
