MMBT3646

MMBT3646 MMBT3646 Switching Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCES VCBO VEBO IC PD TJ, TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Dissipation - Derate above 25°C - Continuous @ TA=25°C Value 15 40 40 5 300 625 5 150 mA mW mW/°C °C Units V V V Operating and Storage Junction Temperature Range Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)CES VCEO(SUS) V(BR)CBO V(BR)EBO ICES Parameter Min. 40 15 40 5 0.5 3 30 25 15 120 Typ. Max. Units V V V V µA Collector-Emitter Breakdown Voltage (IC = 100µAdc, VBE = 0) Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100µAdc, IC = 0) Collector Cut-off Current (VCE = 20Vdc, VBE = 0) (VCE = 20Vdc, VBE = 0, TA = 65°C) DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc) (IC = 100mAdc, VCE = 0.5Vdc) (IC = 300mAdc, VCE = 1Vdc) Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) (IC = 30mA, IB = 3mA, TA =65°C) Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) 0.73 On Characteristics (1) hFE VCE(sat) 0.2 0.28 0.5 0.3 0.95 1.2 1.7 V VBE(sat) V ©2002 Fairchild Semiconductor Corpor...