MMBT3904-G

www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT3904-G (NPN) RoHS Device Features -Epitaxial planar die construction -As complementary type, the PNP transistor MMBT3906-G is recommended 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 2 0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 0.007 (0.20) min 2 Emitter O Dimensions in inches and (millimeter) Maximum Ratings(at TA=25 C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Col lec tor di ssipa tioi n St or ag e tempe rat ur e an d jun ction tempe rat ur e O Symbol V CBO V CEO V EBO IC PC T STG , T J Min Typ Max 60 40 6 0.2 0. 2 Unit V V V A W O -55 +1 50 C Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain V CE =1V , I C =50mA Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time I C =50mA , I B =5mA I C =50mA , I B =5mA V CE =20V , I C =10mA f=100MH Z V CC =3.0V dc , V BE =-0.5V dc I C =10mAdc , I B1 =1.0mA dc V CC =3.0V dc , I C =10mA dc I B1 =I B2 =1.0mA dc fT td tr ts tf h F...