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MMBT3904 Datasheet

Part Number MMBT3904
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

isc Silicon NPN Transistor MMBT3904 DESCRIPTION ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Telephony and professional communication equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg St.

  MMBT3904   MMBT3904






Part Number MMBT3904
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description SMALL SIGNAL NPN TRANSISTOR
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

® MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT3904 s Marking 34 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT3906 SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter C.

  MMBT3904   MMBT3904







Part Number MMBT3904
Manufacturers Diodes
Logo Diodes
Description 40V NPN SMALL SIGNAL TRANSISTOR
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

Features  Complementary PNP Type Available (DIODES™ MMBT3906)  Ideal for Medium Power Amplification and Switching  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  An automotive-compliant part is available under separate datasheet (DIODES™ MMBT3904Q) MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Mechanical Data  Package: SOT23  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 9.

  MMBT3904   MMBT3904







Part Number MMBT3904
Manufacturers NXP
Logo NXP
Description NPN switching transistor
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3904 NPN switching transistor Product data sheet Supersedes data of 2002 Oct 04 2004 Feb 03 http://www.Datasheet4U.com NXP Semiconductors Product data sheet NPN switching transistor FEATURES • Collector current capability IC = 200 mA • Collector-emitter voltage VCEO = 40 V. APPLICATIONS • General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. MARKING TYPE .

  MMBT3904   MMBT3904







Part Number MMBT3904
Manufacturers Micro Commercial Components
Logo Micro Commercial Components
Description NPN Transistor
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

MMBT3904 Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) NPN General Purpose Amplifier Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 357℃/W Junction to Ambient • Thermal Resistance: 185℃/W Junction .

  MMBT3904   MMBT3904







Part Number MMBT3904
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Switching Transistors
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

SMBT3904...MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type SMBT3904/MMBT3904 SMBT3904S Maximum Ratings Parameter Collector-emitter voltage Col.

  MMBT3904   MMBT3904







NPN Transistor

isc Silicon NPN Transistor MMBT3904 DESCRIPTION ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Telephony and professional communication equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE 60 40 6 200 350 -55~150 -55~150 UNIT V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER ICBO Collector Cutoff Current ICEX Collector Cutoff Current hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage fT Current Gain-Bandwidth Product NF Noise Figure CONDITIONS VCE= 60V VCE= 30V IC= 0.1mA ; VCE= 1V IC= 1mA ; VCE= 1V IC= 10mA ; VCE= 1V IC= 50mA ; VCE= 1V IC= 100mA ; VCE= 1V IC= 10mA ;IB= 1mA IC= 50mA ;IB= 5mA IC= 10mA ;IB= 1mA IC= 50mA ;IB= 5mA IC=10mA;VCE=20V; f=100MHz VCE=5.0V; f=10Hz to 15.7kHz; IC=100uA; RS=1.0kΩ MIN 40 70 100 60 30 0.65 300 MAX 50 50 UNIT nA nA 300 0.2 V 0.3 V 0.85 V 0.95 V MHz 5 dB isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor SWITCHING CHARACTERISTICS SYMBOL PARAMETER td Delay Time tr Rise Time ts Storage Time tf Fall Time MMBT3904 CONDITIONS VCC=3..


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