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MMBT42 Datasheet

Part Number MMBT42
Manufacturers UTC
Logo UTC
Description HIGH VOLTAGE TRANSISTOR
Datasheet MMBT42 DatasheetMMBT42 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO.,LTD. MMBTA42 HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 1 3 NPN EPITAXIAL SILICON TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Power Dissipation: PD (max) =350mW 2 SOT-23 MARKING * Pb-free plating product number: MMBTA42L PIN CONFIGURATION 1D www.DataSheet4U.com PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Nu.

  MMBT42   MMBT42






Part Number MMBT4992
Manufacturers Planeta
Logo Planeta
Description Silicon Bidirectional Switch
Datasheet MMBT42 DatasheetMMBT4992 Datasheet (PDF)

www.DataSheet4U.com MMBT4992 Silicon Bidirectional Switch (SBS) in package TO-92 0.5 max 3 2.55 max 1.4 max 1.9 3.1 max 1.2 max 1 2 Pinouts: 1- Anode I, 2- Anode II, 3- Gate Ratings Symbol IT(rms) Igm IT(sm) P Parameter, units DC forward anode current, mA DC gate current, mA Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) Power dissipation, mW Limits 200 5 1 300 Electrical Characteristics (T A=25°C) Symbol VS IS IH IB VF Parameter, unit, test conditions Switchin.

  MMBT42   MMBT42







Part Number MMBT493
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description NPN Transistor
Datasheet MMBT42 DatasheetMMBT493 Datasheet (PDF)

MMBT493 NPN Transistor Features  Complementary Type MMBT593 1. BASE 2. EMITTER 3. COLLECTOR Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RΘJA TJ TSTG Value 120 100 5 1000 250 500 150 -55 to+150 Unit V V V mA mW ℃/W ℃ ℃ 3 2 1 Package: SO.

  MMBT42   MMBT42







Part Number MMBT491
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description NPN Transistor
Datasheet MMBT42 DatasheetMMBT491 Datasheet (PDF)

MMBT491 NPN Transistor Features ■ Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICM PC RΘJA TJ TSTG Value 80 60 5 1 2 250 500 150 -55 to+150 Unit V V V A A mW °C/W °.

  MMBT42   MMBT42







Part Number MMBT489LT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Current Surface Mount NPN Silicon Switching Transistor
Datasheet MMBT42 DatasheetMMBT489LT1 Datasheet (PDF)

www.DataSheet4U.com MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 1.0 2.0 Unit Vdc Vdc Vdc A A 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER TH.

  MMBT42   MMBT42







Part Number MMBT4403WT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet MMBT42 DatasheetMMBT4403WT1 Datasheet (PDF)

www.DataSheet4U.com MMBT4403WT1 Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • Pb−Free Package is Available Machine Model; 400 V http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Symbol PD RqJA TJ, Tstg Value −40 −40 −5.0 −600 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER 3 1 THERMAL CHARACTERISTI.

  MMBT42   MMBT42







HIGH VOLTAGE TRANSISTOR

UNISONIC TECHNOLOGIES CO.,LTD. MMBTA42 HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 1 3 NPN EPITAXIAL SILICON TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Power Dissipation: PD (max) =350mW 2 SOT-23 MARKING * Pb-free plating product number: MMBTA42L PIN CONFIGURATION 1D www.DataSheet4U.com PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBTA42-AE3-R MMBTA42L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD. 1 QW-R206-004.B MMBTA42 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PD TJ TSTG NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) RATINGS 300 300 6 500 350 +150 -40 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Current Gain Bandwidth Product Collector Base Capacitance SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) ICBO IEBO hFE fT Ccb TEST CONDITIONS Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA,.


2007-04-13 : 2N3055    2N3772    2N3773    2N3904    2N3906    2N4401    2N4403    2N5401    2N5551    2N6099   


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