MMBT4401K

MMBT4401K PNP Epitaxial Silicon Transistor MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor February 2005 3 Marking 2 SOT-23 1 1. Base 2. Emitter 3. Collector 2XK Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Value 60 40 6 600 350 150 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO IBEV ICEX hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain * VCE (sat) Collector-Emitter Saturation Voltage * VBE (sat) Base-Emitter Saturation Voltage * fT Current Gain Bandwidth Product Cob Output Capacitance tON Turn On Time tOFF Turn Off Time * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% IC = 100µA, IE = 0 IC = 1.0mA, IB = 0 IE = 100µA, IC = 0 VCE = 35V, VEB = 0.4V VCE = 35V, VEB = 0.4V VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA I C= 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 10V, f = 100MHz VCB=5V, IE=0, f=100KHz VCC = 30V, VBE = 2V IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA IB1 = IB2 = 15mA Min. 60 40 6 20 40 80 100 40 0.75 250 Units V V V mA mW °C Max. 100 100 Units V ...