MMBT489LT1

www.DataSheet4U.com MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 1.0 2.0 Unit Vdc Vdc Vdc A A 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD 310 2.5 RqJA PD 710 5.7 RqJA PDsingle TJ, Tstg 176 575 −55 to +150 mW mW/°C °C/W 403 mW mW/°C °C/W Max Unit 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM N3 M G G 1 mW °C N3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operatio...