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MMBT5087L Datasheet

Part Number MMBT5087L
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Low Noise Transistor
Datasheet MMBT5087L DatasheetMMBT5087L Datasheet (PDF)

MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCBO VEBO IC −50 Vdc −3.0 Vdc −50 mAdc .

  MMBT5087L   MMBT5087L






Part Number MMBT5087LT1
Manufacturers Motorola
Logo Motorola
Description Low Noise Transistor
Datasheet MMBT5087L DatasheetMMBT5087LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5087LT1/D Low Noise Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5087LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –50 –50 –3.0 –50 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBT5087LT1 = 2Q THERMAL CHARACTERISTICS Characteristic.

  MMBT5087L   MMBT5087L







Part Number MMBT5087
Manufacturers Kexin
Logo Kexin
Description PNP Transistors
Datasheet MMBT5087L DatasheetMMBT5087 Datasheet (PDF)

SMD Type Transistors PNP Transistors MMBT5087 (KMBT5087) ■ Features ● Collector Current Capability IC=-100mA ● Collector Emitter Voltage VCEO=-50V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Contin.

  MMBT5087L   MMBT5087L







Part Number MMBT5087
Manufacturers CHINA BASE
Logo CHINA BASE
Description PNP Silicon Epitaxial Planar Transistor
Datasheet MMBT5087L DatasheetMMBT5087 Datasheet (PDF)

MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 100 µA at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA Collector Cutoff Current at -VCB = 35 V Emitter Cutoff Cu.

  MMBT5087L   MMBT5087L







Part Number MMBT5087
Manufacturers TAITRON
Logo TAITRON
Description SMD General Purpose Low Noise Transistor
Datasheet MMBT5087L DatasheetMMBT5087 Datasheet (PDF)

SMD General Purpose Low Noise Transistor (PNP) MMBT5087 SMD General Purpose Low Noise Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5087 Marking Code 2Q VCBO Collector-Base Voltage 50 VCEO Collector-Emi.

  MMBT5087L   MMBT5087L







Low Noise Transistor

MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCBO VEBO IC −50 Vdc −3.0 Vdc −50 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Rat.


2016-06-21 : MMBT5087L    DF20L60U    KTB1369    KTB1368    KTB1367    KTB1366    KTB1260    KTB1241    KTB1151    KTA539   


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