MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5088LT1/D
Low Noise Transistors
NPN Silicon
1 BASE
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5088LT1/D
Low Noise Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT5088LT1 MMBT5089LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50
2 EMITTER
1
3
5089LT1 25 30
Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown
Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown
Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 ICBO MMBT5088 MMBT5089 IEBO MMBT5088 MMBT5089 — — 50 100 — — 50 50 nAdc 35 30 — — nAdc 30 25 ...
