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MMBT5401 Datasheet

Part Number MMBT5401
Manufacturers GME
Logo GME
Description NPN General Purpose Transistor
Datasheet MMBT5401 DatasheetMMBT5401 Datasheet (PDF)

Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBT5551).  Also available in lead free version. Pb Lead-free MMBT5401 APPLICATIONS  Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Marking MMBT5401 2L SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -160 VCEO collector-emitte.

  MMBT5401   MMBT5401






Part Number MMBT5401
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet MMBT5401 DatasheetMMBT5401 Datasheet (PDF)

MMBT5401 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features , MMBT5551 。 High voltage, complementary Pair with MMBT5551.  / Applications 。 General purpose high voltage amplifier.  / Equivalent Circuit / Pinning 3 2 1 PIN 1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 50~150 B 100~300 C 200~400 Marking H2LA H2LB H2LC http://www.fsbrec.com .

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Part Number MMBT5401
Manufacturers LITE-ON
Logo LITE-ON
Description PNP General Purpose Transistor
Datasheet MMBT5401 DatasheetMMBT5401 Datasheet (PDF)

PNP General Purpose Transistor MMBT5401 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMBT5551) MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Jun.

  MMBT5401   MMBT5401







Part Number MMBT5401
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Datasheet MMBT5401 DatasheetMMBT5401 Datasheet (PDF)

Features  Epitaxial Planar Die Construction  Complementary NPN Type - MMBT5551  Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP capable (Note 4) SOT23 B MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Mechanical Data  Case: SOT23  Case material: molded plastic, “Green” molding compound  UL Flammability Classificati.

  MMBT5401   MMBT5401







Part Number MMBT5401
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet MMBT5401 DatasheetMMBT5401 Datasheet (PDF)

MMBT5401 — PNP Epitaxial Silicon Transistor MMBT5401 PNP Epitaxial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Ordering Information Part Number MMBT5401 MMBT5401-D87Z Marking 2L 2L Package SOT-23 3L SOT-23 3L Packing Method Tape and Reel, 3000 pcs, 7 inch Reel Tape and Reel, 10000 pcs, 13 inch Reel Absolute Maximum Ratings(1),(2) Stresses exceeding t.

  MMBT5401   MMBT5401







Part Number MMBT5401
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Surface Mount General Purpose Si-Epi-Planar Transistors
Datasheet MMBT5401 DatasheetMMBT5401 Datasheet (PDF)

www.DataSheet4U.com MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-16 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferfor.

  MMBT5401   MMBT5401







NPN General Purpose Transistor

Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBT5551).  Also available in lead free version. Pb Lead-free MMBT5401 APPLICATIONS  Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Marking MMBT5401 2L SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -160 VCEO collector-emitter voltage -150 VEBO emitter-base voltage -5 IC collector current (DC) -0.6 PD Total device dissipation 0.35 RθJC Thermal resistance,junction to ambient 357 Tj ,Tstg junction and storage temperature -55 to +150 UNIT V V V A W °C/W °C C075 Rev.A www.gmesemi.com 1 Production specification PNP General Purpose Transistor MMBT5401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. UNIT V(BR)CBO Collector-ba.


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