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MMBT5401L Datasheet

Part Number MMBT5401L
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Transistor
Datasheet MMBT5401L DatasheetMMBT5401L Datasheet (PDF)

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − C.

  MMBT5401L   MMBT5401L






Part Number MMBT5401W
Manufacturers SeCoS
Logo SeCoS
Description PNP Silicon Plastic-Encapsulate Transistor
Datasheet MMBT5401L DatasheetMMBT5401W Datasheet (PDF)

Elektronische Bauelemente MMBT5401W PNP Silicon Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version Complementary to MMBT5551W MARKING: K4M Collector 3 1 Base 2 Emitter A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter.

  MMBT5401L   MMBT5401L







Part Number MMBT5401W
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet MMBT5401L DatasheetMMBT5401W Datasheet (PDF)

MMBT5401W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 PNP 。Silicon PNP transistor in a SOT-323 Plastic Package.  / Features , MMBT5551W 。 High voltage, complementary Pair with MMBT5551W.  / Applications 。 General purpose high voltage amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / Marking hFE Classifications Symbol hFE Range Marking A 50~150 H2LA B 100~300 H2LB C 200~400 H2LC http://www.fsbrec.com 1/6 MMBT5401W Rev.E Mar..

  MMBT5401L   MMBT5401L







Part Number MMBT5401W
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Transistor
Datasheet MMBT5401L DatasheetMMBT5401W Datasheet (PDF)

MMBT5401W High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc Stress.

  MMBT5401L   MMBT5401L







Part Number MMBT5401T
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet MMBT5401L DatasheetMMBT5401T Datasheet (PDF)

MMBT5401T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features , MMBT5551T 。 High voltage, complementary Pair with MMBT5551T.  / Applications 。 General purpose high voltage amplifier.  / Equivalent Circuit / Pinning 1 2 3 PIN1:Base PIN 2:Collector / Marking hFE Classifications Symbol hFE Range Marking A 50~150 H2LA PIN 3:Emitter B 100~300 H2LB C 200~400 H2LC ** ** ** http://www.fsbrec.com 1/6 MMBT5401.

  MMBT5401L   MMBT5401L







Part Number MMBT5401LT3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Transistor
Datasheet MMBT5401L DatasheetMMBT5401LT3G Datasheet (PDF)

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − C.

  MMBT5401L   MMBT5401L







High Voltage Transistor

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. −55 to +150 °C http://onsemi.com SOT−23 (TO−236) CASE 318 STYLE 6 COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM 2L M G G 1 2L = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/.


2015-09-11 : LQ133T1JW02    NCT275    ESD1014    SZESD1014    SZESD1014MUTAG    SPZT2222A    SPZT2222AT1G    MMBT5401L    SMMBT5401L    NSVMMBT5401L   


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