MMBT5401LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5401LT1/D High Voltage Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5401LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –150 –160 –5.0 –500 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) (VCB = –120 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO –150 V(BR)CBO –160 V(BR)EBO –5.0 ICES — — –50 –50 nAdc µAdc — — Vdc — Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Preferr...