MMBT5550GH

Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. MMBT5550GH MMBT5551GH MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Symbol V CEO V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value 140 160 6.0 600 3 1 2 SOT-23 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) MMBT5550GH MMBT5551GH V (BR)CEO Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) MMBT5550GH MMBT5551GH V (BR)CBO Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550GH MMBT5551GH MMBT5550GH ( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551GH Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0....