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MMBT5550LT1 Datasheet

Part Number MMBT5550LT1
Manufacturers ETL
Logo ETL
Description High Voltage Transistors
Datasheet MMBT5550LT1 DatasheetMMBT5550LT1 Datasheet (PDF)

High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C 1 BASE Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc MMBT5550LT1 MMBT5551LT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Tot.

  MMBT5550LT1   MMBT5550LT1






Part Number MMBT5550LT1
Manufacturers Motorola
Logo Motorola
Description High Voltage Transistors
Datasheet MMBT5550LT1 DatasheetMMBT5550LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Dev.

  MMBT5550LT1   MMBT5550LT1







Part Number MMBT5550LT1
Manufacturers ON
Logo ON
Description High Voltage Transistors(NPN Silicon)
Datasheet MMBT5550LT1 DatasheetMMBT5550LT1 Datasheet (PDF)

MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the de.

  MMBT5550LT1   MMBT5550LT1







High Voltage Transistors

High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C 1 BASE Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc MMBT5550LT1 MMBT5551LT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C DEVICE MARKING MMBT5550LT1 = M1F, MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C .


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