MMBT589LT1

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT589LT1/D High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications A Device of the m X ™ Family 1 BASE 2 EMITTER COLLECTOR 3 MMBT589LT1 30 Volts 2.0 Amps PNP Transistor 3 1 MAXIMUM RATINGS (TA = 25°C) Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Collector Current — Peak Symbol VCEO VCBO VEBO IC ICM Max –30 – 50 – 5.0 –1.0 –2.0 Unit Vdc Vdc Vdc Adc A 2 CASE 318 – 08, STYLE 6 SOT23LF (TO – 236AB) DEVICE MARKING MMBT589LT1 = G3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature 1. FR– 4 @ Minimum Pad 2. FR– 4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 Symbol PD (1) Max 310 2.5 Rq JA (1) PD (2) 403 710 5.7 Rq JA (2) PDsingle (3) 575 TJ, Tstg – 55 to +150 °C 176 Unit mW mW/°C °C/W mW mW/°C °C/W mW Thermal Clad is a trademark of the Bergquist Company m X ™: MicroExecutive Family of High Performance Surface Mount Devices Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1998 1 MMBT589LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARA...