MMBT6428

MMBT6428 MMBT6428 NPN General Purpose Amplifier This device designed for general pupose amplifier applications at collector currents to 300mA Sourced from process 10. 3 2 1 SOT-23 Mark: 1K 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 50 60 500 - 55 ~ 150 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO ICEO ICBO IEBO hFE Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 VCE = 30V, IB = 0 VCB = 30V, IE = 0 VEB = 5.0V, IB = 0 VCE = 5.0V, IC = 10µA VCE = 5.0V, IC = 100µA VCE = 5.0V, IC = 1.0mA VCE = 5.0V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 1.0mA VCE = 5.0V, IC = 1.0mA, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz 0.56 100 250 250 250 250 Min. 50 60 0.1 10 10 Max. Units V V µA nA nA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain On Characteristics 650 VCE(sat) VBE(on) fT Cobo Cibo Collector-Emitter Sa...