MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current
—Collector Cur...
MAXIMUM RATINGS
Rating Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Base Current
—Collector Current Continuous
Symbol VCEO VCBO VEBO
IB
c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, T"a = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
RflJA
'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 350 350
5.0
250 500
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mA mA
Unit
mW
mW/°C
°C "C/W
MMBT6517
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH
VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N6517 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage dC = 1.0mA)
Collector-Base Breakdown
Voltage C(l = 100 j/A)
Emitter-Base Breakdown
Voltage (IE = 10mA)
Collector Cutoff Current
(VC B = 250 V)
Emitter Cutoff Current (VEB = 5.0 V)
ON CHARACTERISTICS
DC Current Gain (lC = 1.0 mA, Vce = 10 V) (lC = ...
