MMBT6520

SMD High Voltage Transistor (PNP) MMBT6520 SMD High Voltage Transistor (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description VCEO VCBO VEBO IB IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current-Continuous Thermal Characteristics Symbol Ptot RθJA Ptot RθJA TJ, TSTG Description Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C Derate above 25°C Thermal Resistance from Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, Derate above 25°C Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range SOT-23 MMBT6520 2Z -350 -350 -5.0 -250 -500 MMBT6520 225 1.8 556 300 2.4 417 -55 to +150 Unit V V...