MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, T/^ = 25°C Derate above 25°C
P.D
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R&JA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 25 35 3.0 50
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
mW/°C
°C "C/W
.
MMBT6543
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage(2) dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown
Voltage dC = 100 /xAdc, lg = 0)
Emitter-Base Breakdown
Voltage E(l = 100 juAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 25 Vdc, lg = 0)
Emitter Cutoff Current
(V BE = 2.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain(2) dC = 4.0 mAdc, Vqe ...
