MMBT8050C / MMBT8050D
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary...
MMBT8050C / MMBT8050D
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended.
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SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25 OC) Symbol Value 25 40 6 600 200 150 -55 to +150 Unit V V V mA mW
O
Collector Emitter
Voltage C o ll e ct o r B as e V o lt a g e Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
VCEO VCBO VEBO IC Ptot Tj TS
C C
O
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MMBT8050C / MMBT8050D
Characteristics at Ta =25 OC Symbol DC Current Gain at VCE=1V, IC=100mA at VCE=1V, IC=500mA Collector Cutoff Current at VCB=35V Collector Saturation
Voltage at IC=500mA, IB=50mA Base Saturation
Voltage at IC=500mA, IB=50mA Collector Emitter Breakdown
Voltage at IC=2mA Collector Base Breakdown
Voltage at IC=10µA Emitter Base Breakdown
Voltage at IE=100µA Gain Bandwidth Product at VCE=5V, IC=10mA, f=50MHz Collector Base Capacitance at VCB=10V, f=1MHz Thermal Resistance Junction to Ambient CCBO RthA 12 fT 100 V(BR)EBO 6 V(BR)CBO 40 V(BR)CEO 25 VBE(sat) VCE(sat) MMBT8050C MMBT8050D hFE hFE hFE ICBO 100 160 40 Min. Typ.
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Max. 250 400 100 0.5 1.2 200
Unit nA V V V V V MHz pF K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, ...