RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATIO...
RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
DComplement to MMPT8550LT1 TCollector Current:Ic=500mA .,LCollector Dissipation:Pc=225mW(Tc=25oC)
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
O Unit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base
Voltage
NCollector-Emitter
Voltage
Emitter-Base
Voltage
OCollector Current
Collector Dissipation Ta=25oC* Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
40 25 6 500 225 150 -55-150
(Ta=25 oC)
Unit
V V V mA mW OC
O
C
TElectrical Characteristics CCharacteristic
Collector-Base Breakdown
Voltage
ECollector-Emitter Breakdown
Voltage#
Emitter-Base Breakdown
Voltage
LCollector Cutoff Current
Emitter Cutoff Current
EDC Current Gain
DC Current Gain
JDC Current Gain
Collector-Emitter Saturation
Voltage
EBase-Emitter Saturation
Voltage
Base-Emitter
Voltage
WOutput Capacitance
(Ta=25 oC)
Symbo...
