MMBT8050W

MMBT8050W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Tj TS Value 25 40 6 600 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base Saturation Voltage at IC = 500 mA, IB = 50 mA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Base Breakdown Voltage at IC = 10 µA Emitter Base Breakdown Voltage at IE = 100 µA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz MMBT8050CW MMBT8050DW Symbol hFE hFE hFE ICBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO fT CCBO Min. 100 160 40 25 40 6 Typ. 100 12 Max. 250 400 100 0.5 1.2 Unit nA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2006 MMBT8050W www.DataSheet4U.com C o m m o n e m itt e r c o lle c t o r c h a r a c te r is tic s C o m m o n e m it te r c o lle c to r c h a r a c te r is tic s mA 100 0 .3 5 mA 500 0 .9 0 .8 5 80 0 .3 400 IC...