SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Appl...
SMD General Purpose Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
SMD General Purpose Transistor (NPN) MMBT8099
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT8099
Unit
Conditions
VCBO VCEO VEBO
IC
Marking Code Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current
KB 80 V 80 V 6.0 V 0.5 A
Ptot RθJA
Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1)
225 mW
TA=25 ˚C
1.8
mW/° C
Derate above 25 ˚C
556 ° C /W
Ptot
Power Dissipation (Note 2)
300 mW
TA=25 ˚C
2.4
mW/° C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient (Note 2)
417 ° C /W
TJ Junction Temperature
150 ° C
TSTG
Storage Temperature Range
-55 to +150
°C
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
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Rev. A/AH Page 1 of 3
SMD General Purpose Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MMBT8099
Symbol
Description
hFE*
D.C. Current Gain
V(BR)CBO V(BR)CEO V(BR)EBO
Collector-Base Breakdown ...